Nucleation control in MOVPE of group III-nitrides on SiC substrate

被引：16

作者：

Nishida, T ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Vapor Phase Epitaxy Res Grp, Phys Sci Res Lab, Atsugi, Kanagawa 2430198, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷 / 1-4期

关键词：

MOVPE; GaN; SiC; AlN; nucleation;

D O I：

10.1016/S0022-0248(00)00703-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We characterized nitride growth on SiC substrates by using surface sensitive in situ monitoring of shallow angle reflectance (SAR). The growth initiation of the AIN wetting layer on SiC substrate, and that of GaN on the AIN wetting layer are studied, flat growth of the AIN wetting layer on SiC substrate is achieved by excess source supply at the start. and the growth evolution of GaN on the AIN wetting layer depends not only on the source flow rate but also on the species of metalorganic source. Flat GaN and AlN wetting layer growth is achieved by intentional nucleation. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：297 / 300

页数：4

共 11 条

[1] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].