Enhancing Sensitivity of a Single ZnO Micro-/Nanowire Photodetector by Piezo-phototronic Effect

被引:477
作者
Yang, Qing [1 ,2 ]
Guo, Xin [2 ]
Wang, Wenhui [1 ]
Zhang, Yan [1 ]
Xu, Sheng [1 ]
Lien, Der Hsien [1 ]
Wang, Zhong Lin [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Zhejiang Univ, Dept Opt Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R China
关键词
ZnO nanowire; Schottky contact; piezopotential; photodetector; piezo-phototronic effect; FIELD-EFFECT TRANSISTOR; NANOWIRE; ENHANCEMENT;
D O I
10.1021/nn1022878
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate the piezoelectric effect on the responsivity of a metal-semiconductor-metal ZnO micro-/nanowire photodetector. The responsivity of the photodetector is respectively enhanced by 530%, 190%, 9%, and 15% upon 4.1 pW, 120.0 pW, 4.1 nW, and 180.4 nW UV light illumination onto the wire by introducing a -0.36% compressive strain in the wire, which effectively tuned the Schottky barrier height at the contact by the produced local piezopotential. After a systematic study on the Schottky barrier height change with tuning of the strain and the excitation light intensity, an in-depth understanding is provided about the physical mechanism of the coupling of piezoelectric, optical, and semiconducting properties. Our results show that the piezo-phototronic effect can enhance the detection sensitivity more than 5-fold for pW levels of light detection.
引用
收藏
页码:6285 / 6291
页数:7
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