Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors

被引：128

作者：

Wei, Te-Yu ^{[1
,2
]}

Huang, Chi-Te ^{[2
,3
]}

Hansen, Benjamin J. ^{[2
]}

Lin, Yi-Feng ^{[4
,5
]}

Chen, Lih-Juann ^{[3
]}

Lu, Shih-Yuan ^{[1
]}

Wang, Zhong Lin ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30013, Taiwan

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[4] Chung Yuan Christian Univ, Dept Chem Engn, Chungli 320, Taiwan

[5] Chung Yuan Christian Univ, R&D Ctr Membrane Technol, Chungli 320, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 01期

关键词：

adsorption; cadmium compounds; copper compounds; elemental semiconductors; II-VI semiconductors; nanosensors; nanowires; oxygen; photodetectors; Schottky barriers; semiconductor materials; semiconductor quantum wires; silicon; wide band gap semiconductors; ULTRAVIOLET PHOTODETECTORS; ZNO NANOWIRE; NANOBELTS; SENSOR;

D O I：

10.1063/1.3285178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Schottky contact based photon detection was demonstrated using CdS (visible light responsive), silicon (indirect n-type oxygen-non-adsorbing), and CuO (indirect p-type oxygen-adsorbing) nanowire nanosensors. With changing one of the two nanowire-electrode contacts from ohmic to Schottky, detection sensitivities as high as 10(5)% were achieved by the CdS nanowire nanosensor operated at the reverse bias mode of -8 V, which was 58 times higher than that of the corresponding ohmic contact device. The reset time was also significantly reduced. In addition, originally light nonresponsive silicon and CuO nanowires became light responsive when fabricated as a Schottky contact device. These improvements in photon detection can be attributed to the Schottky gating effect realized in the present nanosensor system by introducing a Schottky contact.

引用

页数：3

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