Nd-doped silicon nanowires with room temperature ferromagnetism and infrared photoemission

被引：9

作者：

Lee, Wei-Fan ^{[1
]}

Lee, Chung-Yang ^{[1
]}

Ho, Mei-Lin ^{[2
]}

Huang, Chi-Te ^{[1
]}

Lai, Chen-Ho ^{[1
]}

Hsieh, Ho-Yen ^{[1
]}

Chou, Pi-Tai ^{[2
]}

Chen, Lih-Juann ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[2] Natl Taiwan Univ, Dept Chem, Taipei 106, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 26期

关键词：

elemental semiconductors; ferromagnetism; magnetic hysteresis; nanotechnology; nanowires; neodymium; photoluminescence; semiconductor doping; silicon; MAGNETIC-PROPERTIES; LUMINESCENCE;

D O I：

10.1063/1.3168550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nd-doped silicon nanowires have been synthesized by a vapor transport and condensation method. The incorporation of neodymium within silicon nanowires was achieved by using NdCl3 center dot 6H(2)O powder as the doping source. Ferromagnetism and infrared photoluminescence at room temperature were discovered. The significant variation and versatility of the properties exhibited by the Nd-doped silicon nanowires are promising for exploitation for the advanced silicon-based devices.

引用

页数：3

共 31 条

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