Silicon nanowires: the key building block for future electronic devices

被引：108

作者：

Chen, Lih J. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci, Hsinchu, Taiwan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2007年 / 17卷 / 44期

关键词：

D O I：

10.1039/b709983e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon nanowires (SiNWs) are the most promising building block for future electronic devices; tremendous progress has been made in the past ten years. In this article, the most significant advances in the syntheses and mechanisms, physical properties as well as device fabrication and applications of SiNWs reported in the literature since the beginning of 2006 are highlighted. Past achievements are also briefly summarized, and the future outlook is addressed.

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页码：4639 / 4643

页数：5

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