Breakdown enhancement in silicon nanowire p-n junctions

被引：23

作者：

Agarwal, P. ^{[1
]}

Vijayaraghavan, M. N. ^{[1
]}

Neuilly, F. ^{[1
]}

Hijzen, E. ^{[1
]}

Hurkx, G. A. M. ^{[1
]}

机构：

[1] NXP Semicond, B-3001 Louvain, Belgium

来源：

NANO LETTERS | 2007年 / 7卷 / 04期

关键词：

D O I：

10.1021/nl062681n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate highly reproducible silicon nanowire diodes fabricated with a fully VLSI compatible etching technology, with diameters down to 30 nm. A contact technology based on recrystallized polysilicon enables specific contact resistances as low as rho approximate to 10(-7) Omega cm(2). Our devices show a strongly diameter-dependent breakdown voltage at reverse bias, which we explain in terms of the influence of the surrounding dielectric. We suggest that this technology is suitable for incorporating nanowire-based functionalities into future integrated circuits.

引用

收藏

页码：896 / 899

页数：4

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