Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection

被引:368
作者
Hayden, O
Agarwal, R
Lieber, CM [1 ]
机构
[1] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
[2] Harvard Univ, Dept Engn & Appl Sci, Cambridge, MA 02138 USA
关键词
D O I
10.1038/nmat1635
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Integrating nanophotonics with electronics could enhance and/or enable opportunities in areas ranging from communications and computing to novel diagnostics(1,2). Light sources and detectors are important elements for integration(1), and key progress has been made using semiconducting nanowires(3-5) and carbon nanotubes to yield electrically driven sources(6-12) and photoconductor detectors(13-17). Detection with photoconductors has relatively poor sensitivity at the nanometre scale, and thus large amplification is required to detect low light levels and ultimately single photons with reasonable response time. Here, we report avalanche multiplication of the photocurrent in nanoscale p-n diodes consisting of crossed silicon-cadmium sulphide nanowires. Electrical transport and optical measurements demonstrate that the nanowire avalanche photodiodes (nanoAPDs) have ultrahigh sensitivity with detection limits of less than 100 photons, and subwavelength spatial resolution of at least 250 nm. Crossed nanowire arrays also show that nanoAPDs are reproducible and can be addressed independently without cross-talk. NanoAPDs and arrays could open new opportunities for ultradense integrated systems, sensing and imaging applications.
引用
收藏
页码:352 / 356
页数:5
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