Demonstration of blue-ultraviolet avalanche photo-diodes of II-VI wide bandgap compounds grown by MBE

被引：7

作者：

Abe, T ^{[1
]}

Ishikura, H ^{[1
]}

Fukuda, N ^{[1
]}

Aung, ZM ^{[1
]}

Adachi, M ^{[1
]}

Kasada, H ^{[1
]}

Ando, K ^{[1
]}

机构：

[1] Tottori Univ, Elect & Elect Dept, Fac Engn, Tottori 6808552, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

ZnSe; photo-diode; blue-ultraviolet photodetector; APD operation; MBE;

D O I：

10.1016/S0022-0248(00)00289-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper presents the first demonstration of blue-ultraviolet avalanche photo-diode (APD) operation using II-VI wide bandgap semiconductor ZnSe, grown on GaAs substrate by molecular-beam epitaxy. With improving crystal quality on macroscopic defects as well as an effective mesa-etching technology, the p(+)-n structure ZnSe diode has shown a distinct APD operation with a large avalanche gain of G = 50 under high reverse bias of 27 V at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1134 / 1137

页数：4

共 7 条

[1] Optimization of ZnSe/ZnTe superlattice structured p-contact for ZnSe-based optical devices
Abe, T
Ishikura, H
Saomoto, Y
Goto, K
Masuda, K
Shirai, T
Yamada, H
Kuroda, S
Kasada, H
Ando, K
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 214 (214) : 492 - 496
[2] High quantum efficiency II-VI photodetectors for the blue and blue-violet spectral range
Ehinger, M
Koch, C
Korn, M
Albert, D
Nürnberger, JN
Hock, V
Faschinger, W
Landwehr, G
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (24) : 3562 - 3564
[3] Ishikura H, 1998, BLUE LASER AND LIGHT EMITTING DIODES II, P677
[4] Nakamura S, 1998, ELECTRON COMM JPN 2, V81, P1, DOI 10.1002/(SICI)1520-6432(199805)81:5<1::AID-ECJB1>3.0.CO
[5] 2-P
[6] InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Kiyoku, H
Sugimoto, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (2B): : L217 - L220
[7] OKUYAMA H, 1994, ELECTRON LETT, V30, P1488

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