Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties

被引:243
作者
He, JH
Lao, CS
Chen, LJ [1 ]
Davidovic, D
Wang, ZL
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[3] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
关键词
D O I
10.1021/ja0559193
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors. Copyright © 2005 American Chemical Society.
引用
收藏
页码:16376 / 16377
页数:2
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