Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy

被引：251

作者：

Fuhrmann, B

Leipner, HS

Höche, HR

Schubert, L

Werner, P

Gösele, U

机构：

[1] Univ Halle Wittenberg, Interdisziplinares Zentrum Mat Wissensch, D-06120 Halle An Der Saale, Germany

[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle An Der Saale, Germany

来源：

NANO LETTERS | 2005年 / 5卷 / 12期

关键词：

D O I：

10.1021/nl051856a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Because of their importance in fundamental research and possible applications in nanotechnology and nanoelectronics, semiconductor nanowires have attracted much interest. In addition to the growth itself, the control of the size and location is an essential problem. Here we show the growth of ordered arrays of vertically aligned silicon nanowires by molecular beam epitaxy using prepatterned arrays of gold droplets on Si(111) substrates. The ordered arrays of gold particles were produced by nanosphere lithography.

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页码：2524 / 2527

页数：4

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