Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties

被引：48

作者：

Huang, C. T. ^{[1
]}

Hsin, C. L. ^{[1
]}

Huang, K. W. ^{[1
]}

Lee, C. Y. ^{[1
]}

Yeh, P. H. ^{[1
]}

Chen, U. S. ^{[1
]}

Chen, L. J. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

关键词：

D O I：

10.1063/1.2777181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with ErCl3 center dot 6H(2)O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 mu m, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5x10(-2) Omega cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.

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页数：3

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