Conductive atomic force microscope nanopatterning of hydrogen-passivated silicon in inert organic solvents

被引：37

作者：

Kinser, CR ^{[1
]}

Schmitz, MJ ^{[1
]}

Hersam, MC ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci, Evanston, IL 60208 USA

来源：

NANO LETTERS | 2005年 / 5卷 / 01期

关键词：

D O I：

10.1021/nl048275q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ambient liquid phase atomic force microscope (AFM) techniques for nanopatterning organic molecules on silicon through direct Si-C bonds rely on reactions that are in direct competition with spurious oxidation. We study the effectiveness of an inert hydrophobic organic solvent at suppressing oxidation of hydrogen-passivated silicon under ambient conditions. Nanometer scale features were fabricated on an H:Si(111) substrate using a conductive AFM in hexadecane. The patterned features show chemical and kinetic behavior consistent with field induced oxidation (FIO) in air, The mechanism for FIO in hexadecane is discussed.

引用

页码：91 / 95

页数：5

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