Facet formation and overgrowth of sub-μm W-patterns on GaAs(001) surfaces

被引：2

作者：

Jarlskog, L ^{[1
]}

Wernersson, LE ^{[1
]}

Borgström, M ^{[1
]}

Seifert, W ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Univ Lund, Solid State Phys Nanometer Struct Consortium, S-22100 Lund, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 222卷 / 03期

关键词：

overgrowth; W; metal; GaAs; MOVPE; III-V semiconductors;

D O I：

10.1016/S0022-0248(00)00940-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We study the epitaxial overgrowth of GaAs over mum-sized W-patterns by metalorganic vapor-phase epitaxy (MOVPE). Rings and circles of W have been overgrown under various growth conditions and the lateral overgrowth has been characterized by inspecting the surface. The main results of this work are the identification of the most prominent surfaces in the growth front, an increase of the orientation-dependent lateral overgrowth with decreased temperature and the controlled formation of nm-sized openings extending down to embedded metallic elements. The control of these issues is necessary for fabrication of devices which contain embedded metallic features. (C) 2001 Published by Elsevier Science B.V.

引用

页码：534 / 537

页数：4

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