Microstructures and grain boundaries of(Ti,Al)N films

被引：55

作者：

Suzuki, T

Huang, D

Ikuhara, Y

机构：

[1] Keio Univ, Dept Mech Engn, Kohoku Ku, Yokohama, Kanagawa 223, Japan

[2] Japan Fine Ceram Ctr, Res & Dev Lab, Mat Characterizat Div, Atsuta Ku, Nagoya, Aichi 456, Japan

[3] Univ Tokyo, Dept Mat Sci, Bunkyo Ku, Tokyo 113, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 1998年 / 107卷 / 01期

关键词：

Al; grain boundaries; TiN films; (Ti; Al)N films;

D O I：

10.1016/S0257-8972(98)00550-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Titanium and titanium-aluminum targets 100 phi in diameter were arc-discharged at similar to 500 degrees C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 mu m. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：41 / 47

页数：7

共 12 条

[1] HARD COATINGS OF TIN, (TIHF)N AND (TINB)N DEPOSITED BY RANDOM AND STEERED ARC EVAPORATION [J].