Direct formation of ingaas coupled quantum wire-dot structures by selective molecular beam epitaxy on inp patterned substrates

被引：11

作者：

Hanada, Y ^{[1
]}

Ono, N

Fujikura, H

Hasegawa, H

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 060, Japan

[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 060, Japan

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期

关键词：

D O I：

10.1016/S0038-1101(98)00040-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new approach to grow an array of InGaAs coupled quantum wire-dot structures by a single growth run of selective MBE on a specially patterned InP substrate is presented. A detailed CL study revealed successful formation of an array of high quality InGaAs coupled wire-dot structures having a double barrier potential profile between the wires and the dot. The present structure may be useful for fabrication of single electron device arrays. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1413 / 1417

页数：5

共 6 条

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