A novel simultaneous unipolar multispectral integrated technology approach for HgCdTeIR detectors and focal plane arrays

被引：65

作者：

Tennant, WE

Thomas, M

Kozlowski, LJ

McLevige, WV

Edwall, DD

Zandian, M

Spariosu, K

Hildebrandt, G

Gil, V

Ely, P

Muzilla, M

Stoltz, A

Dinan, JH

机构：

[1] Rockwell Int Corp, Ctr Sci, Thousand Oaks, CA 91360 USA

[2] Boeing Elect Syst & Missile Def, Anaheim, CA 92803 USA

[3] E OIR Measurements Inc, Spotsylvania, VA 22553 USA

[4] NVESD, Ft Belvoir, VA 22060 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 06期

关键词：

HgCdTe; MBE; MWIR; LWIR;

D O I：

10.1007/BF02665839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the last few years Rockwell has developed a novel simultaneous unipolar multispectral integrated HgCdTe detector and focal plane array technology that is a natural and relatively straightforward derivative of our baseline double layer planar heterostructure (DLPH) molecular beam epitaxial (MBE) technology. Recently this technology was awarded a U.S. patent. This simultaneous unipolar multispectral integrated technology (SUMIT) shares the high performance characteristics of its DLPH antecedent. Two color focal plane arrays with low-10(13) cm(-2)s(-1) background limited detectivity performance (BLIP D*) have been obtained for mid-wave infrared (MWIR, 3-5 mum) devices at T > 130 K and for long-wave infrared (LWIR, 8-10 mum) devices at T similar to 80 K.

引用

页码：590 / 594

页数：5

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