Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE

被引：13

作者：

Kasu, M ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷 / 1-4期

关键词：

field emitter; nitride; doping; phosphor; electron affinity;

D O I：

10.1016/S0022-0248(00)00814-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Electron field emission (FE) from high-quality AIN grown by metalorganic vapor-phase epitaxy is studied. The full-widths at half-maximum of the X-ray rocking curve of undoped and heavily Si-doped (Si density: 2.5 x 10(20) cm(-3)) high-quality AIN were as low as 91 and 94 arcsec, respectively. The heavily Si-doped AlN showed a maximum FE current of 347 muA and its density was 11 mA/cm(2) Field emission enhancement as a result of Si doping can be explained by hopping conduction through a Si impurity level. White, red, green, blue light emission (luminance: about 1200 cd/m(2)) from phosphors excited by the field-emitted electrons was observed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：739 / 742

页数：4

共 6 条

[1] GROWTH AND PROPERTIES OF ALXGA1-XN EPITAXIAL LAYERS [J].