Large and stable field-emission current from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy

被引：41

作者：

Kasu, M ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期

关键词：

D O I：

10.1063/1.126514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the electron field emission (FE) from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy. We found that, as the Si-dopant density increases, the threshold electric field decreases and, consequently, the FE current from AlN increases drastically. We show that heavily Si-doped (2.5x10(20) cm(-3)) AlN has a threshold electric field of 34 V/mu m, a maximum FE current density of 4.8 mA/cm(2), and stable FE current (fluctuation: 3%). (C) 2000 American Institute of Physics. [S0003-6951(00)03020-5].

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页码：2910 / 2912

页数：3

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