Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

被引：72

作者：

Sowers, AT ^{[1
]}

Christman, JA ^{[1
]}

Bremser, MD ^{[1
]}

Ward, BL ^{[1
]}

Davis, RF ^{[1
]}

Nemanich, RJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 16期

关键词：

D O I：

10.1063/1.120052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cold cathode structures have been fabricated using Al0N and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 mu m holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 mu m holes displayed emission for up to 30 min before failing, Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 10(4) times the collector currents. (C) 1997 American Institute of Physics.

引用

页码：2289 / 2291

页数：3

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