Fabrication of graded Cu(InGa)Se2 films by inline evaporation

被引：10

作者：

Hanket, GM ^{[1
]}

Paulson, PD ^{[1
]}

Singh, U ^{[1
]}

Junkert, ST ^{[1
]}

Birkmire, RW ^{[1
]}

Doyle, FJ ^{[1
]}

Eser, E ^{[1
]}

Shafarman, WN ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915881

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An inline evaporation system for depositing Cu(InGa)Se-2 films from elemental sources was characterized. The system demonstrated reproducibly good deposition uniformity and device performance for translation speeds ranging from 1 to 2.5 inches/min. A source effusion model predicting film thickness, composition, and compositional gradients was developed and tested. The effusion model was reasonably successful in predicting measured film characteristics. The model can be further improved by a more accurate description of the flux profiles. In addition, effusion in the transitional flow regime and the possibility of Ga-In interdiffusion need to be explored. Such an improved model would be a valuable tool for the design and development of commercial scale systems, as well as for improved efficiency and flexibility in manufacturing.

引用

页码：499 / 504

页数：6

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