Preparation of scandium aluminum nitride thin films by using scandium aluminum alloy sputtering target and design of experiments

被引：65

作者：

Akiyama, Morito ^{[1
]}

Tabaru, Tatsuo ^{[1
]}

Nishikubo, Keiko ^{[1
]}

Teshigahara, Akihiko ^{[2
]}

Kano, Kazuhiko ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Measurement Solut Res Ctr, Saga 8410052, Japan

[2] DENSO CORP, Res Labs, Aichi 4700111, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2010年 / 118卷 / 1384期

关键词：

ScAlN thin films; ScAl alloy target; Sputtering; Design of experiments; Piezoelectric constant; PIEZOELECTRIC RESPONSE; PZT FILMS; TEMPERATURE; ZINCBLENDE; DEPOSITION; ALN;

D O I：

10.2109/jcersj2.118.1166

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

081705 [工业催化]; 082905 [生物质能源与材料];

摘要：

Scandium aluminum nitride alloy (ScxAl1-xN) thin films were prepared using rf magnetron sputtering with a scandium aluminum alloy (Sc0.42Al0.58) target on n-type (100) silicon substrates. We have investigated the effects of 4 sputtering control factors, which are substrate temperature, sputtering pressure, nitrogen (N-2) concentration and cathode power, on the piezoelectric constant d(33) of ScxAl1-xN films using design of experiments. Consequently, it is statistically proved that N-2 concentration in sputtering gas is the most important control factor. The piezoelectric constant d(33) indicates the maximum value of 19.0 pC/N at N-2 concentration of 25%. The composition of ScxAl1-xN films prepared under optimized sputtering conditions is Sc0.38Al0.62N, and there is the composition difference between the ScAl alloy target and the thin film. However, the piezoelectric constant of the Sc0.38Al0.62N film is coincident with that of Sc0.38Al0.62N films prepared by dual co-sputtering. Thus, it is possible to prepare high piezoelectric ScxAl1-xN films by using the ScAl alloy sputtering target. ScAl alloy targets are effective for keeping scandium concentration constant in ScxAl1-xN thin films. (C) 2010 The Ceramic Society of Japan. All rights reserved.

引用

页码：1166 / 1169

页数：4

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