Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

被引：767

作者：

Akiyama, Morito ^{[1
]}

Kamohara, Toshihiro ^{[1
]}

Kano, Kazuhiko ^{[2
]}

Teshigahara, Akihiko ^{[2
]}

Takeuchi, Yukihiro ^{[2
]}

Kawahara, Nobuaki ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Measurement Solut Res Ctr, Saga 8410052, Japan

[2] DENSO CORP, Res Labs, Aichi 4700111, Japan

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 05期

关键词：

TEMPERATURE; GROWTH; SCXGA1-XN;

D O I：

10.1002/adma.200802611

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A high-temperature piezoelectric material exhibits a good balance between high maximum use temperature and large piezoelectricity. This is achieved by the combination of the discovery of a phase transition in scandium aluminum nitride (Sc(x)Al(1-x)N) alloy thin films, and the use of dual cosputtering, which leads to non-equilibrium alloy thin films.

引用

页码：593 / +

页数：5

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