Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

被引：321

作者：

Akiyama, Morito ^{[1
]}

Kano, Kazuhiko ^{[2
]}

Teshigahara, Akihiko ^{[2
]}

机构：

[1] Natl Inst Adv Sci & Technol, Measurement Solut Res Ctr, Saga 8410052, Japan

[2] DENSO Corp, Res Labs, Aichi 4700111, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 16期

关键词：

PZT FILMS; SCXGA1-XN; ALN; MICROSTRUCTURE; COEFFICIENT; PRINCIPLES; ZINCBLENDE;

D O I：

10.1063/1.3251072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have investigated the influence of growth temperature and scandium concentration on the piezoelectric response of scandium aluminum nitride [Sc(x)Al(1-x)N) films prepared by dual reactive cosputtering. The piezoelectric response strongly depends on the growth temperature and scandium concentration. The piezoelectric response of the films prepared at 400 degrees C gradually increases with increasing scandium concentration. On the other hand, the piezoelectric response of the films prepared at 580 degrees C drastically decreases and increases in the scandium concentration from 30% to 40%. We think that the drastic change of the piezoelectric response is due to the disordered grain growth. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3251072]

引用

页数：3

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