Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films

被引：63

作者：

Akiyama, Morito ^{[1
]}

Kamohara, Toshihiro ^{[1
]}

Kano, Kazuhiko ^{[2
]}

Teshigahara, Akihiko ^{[2
]}

Kawahara, Nobuaki ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Measurement Solut Res Ctr, Tosu, Saga 8410052, Japan

[2] DENSO Corp, Res Labs, Nisshin, Aichi 4700111, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2957654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have investigated the influence of oxygen concentration in sputtering gas on the piezoelectric response of aluminum nitride (AlN) thin films prepared on silicon substrates. The piezoelectric response strongly depends on the oxygen concentration, and changes from +6.8 to -7.0 pC/N with increasing oxygen concentration from 0% to 1.2%. The polar direction drastically inverts from the Al polarity to N polarity. When the oxygen concentration in sputtering gas was 1.2%, the oxygen concentration in the AlN films was 7 at. %. Furthermore, the growth rate of the AlN films gradually decreases with increasing oxygen concentration in sputtering gas. (C) 2008 American Institute of Physics.

引用

页数：3

共 24 条

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