The effects of chemical doping with F4TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique

被引：53

作者：

Nosho, Y. ^{[1
]}

Ohno, Y.

Kishimoto, S.

Mizutani, T.

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 464, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama, Japan

[3] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 464, Japan

[4] Nagoya Univ, Inst Adv Res, Nagoya, Aichi, Japan

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 41期

关键词：

D O I：

10.1088/0957-4484/18/41/415202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the effects of p-type chemical doping with F(4)TCNQ (tetrafluorotetracyano-p-quinodimethane) in carbon nanotube field-effect transistors (CNFETs). The transmission-line-model technique using multi-probe CNFETs has been employed to investigate the effects of chemical doping on the channel resistance and contact resistance. It has been found that chemical doping is effective in the reduction of the contact resistance as well as the channel resistance. The device performances of top-gate CNFETs such as transconductance, on-resistance, and on/ off ratio were improved by the F(4)TCNQ chemical doping on the access regions.

引用

页数：4

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