Effects of fabrication process on current-voltage characteristics of carbon nanotube field effect transistors

被引：19

作者：

Mizutani, T ^{[1
]}

Iwatsuki, S ^{[1
]}

Ohno, Y ^{[1
]}

Kishimoto, S ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4A期

关键词：

carbon nanotube; field effect transistor; hysteresis; ambipolar characteristics; SiNx; backgate; top gate;

D O I：

10.1143/JJAP.44.1599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of the fabrication process on the current-voltage (I-V) characteristics of carbon nanotube field effect transistors (CNT-FETs) were studied in detail. A large hysteresis observed in the I-V characteristics of the CNT-FETs having no passivation film became small by passivating the device surface with a SiNx film. The conduction behaivior of the CNT-FETs changed from p-type to ambipolar characteristics by SiNx passivation. Ambipolar characteristics were also observed in the top-gate CNT-FETs with a gate-source spacing of 2 mu m.

引用

页码：1599 / 1602

页数：4

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