Numerical simulation of plasma chemical vapor deposition from silane: Effects of the plasma-substrate distance and hydrogen dilution

被引:10
作者
Kawase, M [1 ]
Nakai, T [1 ]
Yamaguchi, A [1 ]
Hakozaki, T [1 ]
Hashimoto, K [1 ]
机构
[1] Kyoto Univ, Fac Engn, Dept Chem Engn, Sakyo Ku, Kyoto 60601, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 6A期
关键词
hydrogenated amorphous silicon; rf plasma chemical vapor deposition; numerical simulation; hydrogen dilution; plasma-substrate separation;
D O I
10.1143/JJAP.36.3396
中图分类号
O59 [应用物理学];
学科分类号
摘要
Rf plasma chemical vapor deposition from silane was numerically analyzed. When a substrate was moved away from the plasma, gas-phase polymerization increased the contribution of oligomer radicals to film deposition. In addition, the contribution of silylene radicals became lower compared with that of silyl radicals. As a result of the trade-off between these two effects, an optimal plasma-substrate distance; where a high-quality a-Si:H film was obtained, appeared. Dilution of feed silane with hydrogen effectively reduced gas-phase polymerization and enhanced the generation of hydrogen radicals that create silyl radicals selectively through a reaction with silane. Improvement of the film quality as a result of plasma-substrate separation and hydrogen dilution was thus explained by the change in the composition of film precursors.
引用
收藏
页码:3396 / 3407
页数:12
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