Effects of postannealing in oxygen ambient on leakage properties of (Ba, Sr)TiO3 thin-film capacitors

被引：29

作者：

Fukuda, Y

Numata, K

Aoki, K

Nishimura, A

Fujihashi, G

Okamura, S

Ando, S

Tsukamoto, T

机构：

[1] Texas Instruments Tsukuba Res & Dev Ctr Ltd, Tsukuba, Ibaraki 305, Japan

[2] Texas Instruments Inc, Memory Res & Dev Ctr, Dallas, TX 75243 USA

[3] Sci Univ Tokyo, Fac Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 162, Japan

[4] Sci Univ Tokyo, Fac Sci & Engn, Dept Elect & Comp Sci, Yamaguchi 756, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 4B期

关键词：

(Ba; Sr)TiO3; thin-film capacitor; leakage property; postannealing in oxygen; effects of postannealing conditions; Schottky barrier height;

D O I：

10.1143/JJAP.37.L453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of postannealing in oxygen ambient on the leakage properties of sputter-deposited (Ba, Sr)TiO3 (BST) thin-film capacitors with Pt electrodes are investigated as a function of oxygen gas pressure, postannealing temperature and postannealing time. It is shown that the leakage properties can be improved by increasing these conditions. By comparing the leakage behavior with a Schottky emission model, it is concluded that the main effect of postannealing is an increase in the Pt/BST Schottky barrier height. It is also shown that the Fermi level of the BST film may be pinned at the Pr/BST interface because of oxygen vacancies in the film.

引用

页码：L453 / L455

页数：3

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