Highly stable ZnO thin films by atomic layer deposition

被引：30

作者：

Sang, BS ^{[1
]}

Yamada, A ^{[1
]}

Konagai, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 10A期

关键词：

ZnO; transparent conducting oxide; stability;

D O I：

10.1143/JJAP.37.L1125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

B-doped ZnO films were prepared on Coming 7059 glass by atomic layer deposition (ALD) using diethylzinc (DEZn) and H2O as reactant gases, and diborane (B2H6) as the dopant gas. The stability of the electrical properties of the obtained ZnO films was investigated. Variations in the electrical properties of the ZnO films with air exposure and heat treatment were observed. The stability of the electrical properties of the ZnO films grown by metalorganic vapor deposition (MOCVD) and photo-MOCVD was also investigated. It was found that the electrical properties of ZnO films grown by ALD were very stable, indicating that the ALD technique is attractive for the deposition of high-quality transparent conducting ZnO films.

引用

页码：L1125 / L1128

页数：4

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