Growth and characterization of (La,Sr)(Al,Ta)O3 single crystals as substrates for GaN epitaxial growth

被引：35

作者：

Shimamura, K ^{[1
]}

Tabata, H ^{[1
]}

Takeda, H ^{[1
]}

Kochurikhin, VV ^{[1
]}

Fukuda, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 194卷 / 02期

关键词：

(La; Sr)(Al; Ta)O-3; GaN; Czochralski method; substrate; lattice matching; perovskite;

D O I：

10.1016/S0022-0248(98)00730-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have successfully grown [111] oriented (La,Sr)(Al,Ta)O-3 (LSAT) mixed-perovskite single crystals by the Czochralski method. Compositional uniformity and coloring phenomena are discussed in relation to the growth conditions. Since LSAT single crystals have excellent lattice matching with GaN, they are promising as new substrates for the growth of high-quality GaN epitaxial layers. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：209 / 213

页数：5

共 15 条

[1]

AKASAKI I, 1995, JPN J APPL PHYS 2, V34, P1517

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[3] HEAT-TRANSFER IN VERTICAL BRIDGMAN GROWTH OF OXIDES - EFFECTS OF CONDUCTION, CONVECTION, AND INTERNAL RADIATION [J].

BRANDON, S ;

DERBY, JJ .

JOURNAL OF CRYSTAL GROWTH, 1992, 121 (03) :473-494

[4] INTERNAL RADIATIVE TRANSPORT IN THE VERTICAL BRIDGMAN GROWTH OF SEMITRANSPARENT CRYSTALS [J].

BRANDON, S ;

DERBY, JJ .

JOURNAL OF CRYSTAL GROWTH, 1991, 110 (03) :481-500

[5] HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES [J].

LESTER, SD ;

PONCE, FA ;

CRAFORD, MG ;

STEIGERWALD, DA .

APPLIED PHYSICS LETTERS, 1995, 66 (10) :1249-1251

[6] MIXED-PEROVSKITE SUBSTRATES FOR HIGH-TC SUPERCONDUCTORS [J].

MATEIKA, D ;

KOHLER, H ;

LAUDAN, H ;

VOLKEL, E .

JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :447-456

[7] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398

[8] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[9] HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES [J].

NAKAMURA, S ;

SENOH, N ;

IWASA, N ;

NAGAHAMA, SI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A) :L797-L799

[10]

NAKAMURA S, 1996, JPN J APPL PHYS PT 1, V35, P74

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