Thermal stability of interfaces between metals and InP-Based materials

被引：2

作者：

Ashizawa, Y

Nozaki, C

Noda, T

Sasaki, A

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 04期

关键词：

electrode; high-electron mobility transistor (HEMT); metal/semiconductor interface; Rutherford backscattering spectrometry; stability;

D O I：

10.1007/BF02666529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500 degrees C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/In-based semiconductors, respectively. Faster diffusion of Pt atoms was observed in In- and As-containing materials than in P-containing materials. Mo/semiconductor interfaces were the most stable.

引用

页码：715 / 719

页数：5

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