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COMPOUND SEMICONDUCTOR CONTACT METALLURGY

被引：13
作者：
SANDS, T
机构：
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1988年 / 1卷 / 3-4期
关键词：
D O I：
10.1016/0921-5107(88)90010-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：289 / 312
页数：24
相关论文
共 132 条
[1]   OHMIC CONTACTS TO N-GAAS USING IN/PD METALLIZATION [J].
ALLEN, LH ;
HUNG, LS ;
KAVANAGH, KL ;
PHILLIPS, JR ;
YU, AJ ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1987, 51 (05) :326-327
[2]   DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J].
ANDERSON, WT ;
CHRISTOU, A ;
DAVEY, JE .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :430-435
[3]   PHASE-EQUILIBRIA IN METAL-GALLIUM-ARSENIC SYSTEMS - THERMODYNAMIC CONSIDERATIONS FOR METALLIZATION MATERIALS [J].
BEYERS, R ;
KIM, KB ;
SINCLAIR, R .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2195-2202
[4]   GROWTH OF MOLYBDENUM AND TUNGSTEN ON GAAS IN A MOLECULAR-BEAM EPITAXY SYSTEM [J].
BLOCH, J ;
HEIBLUM, M ;
KOMEM, Y .
APPLIED PHYSICS LETTERS, 1985, 46 (11) :1092-1094
[5]   METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J].
BRASLAU, N ;
GUNN, JB ;
STAPLES, JL .
SOLID-STATE ELECTRONICS, 1967, 10 (05) :381-+
[6]   CONTACT AND METALLIZATION PROBLEMS IN GAAS INTEGRATED-CIRCUITS [J].
BRASLAU, N .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :3085-3090
[7]   FERMI LEVEL PINNING AND CHEMICAL INTERACTIONS AT METAL-INXGA1-XAS(100) INTERFACES [J].
BRILLSON, LJ ;
SLADE, ML ;
VITURRO, RE ;
KELLY, MK ;
TACHE, N ;
MARGARITONDO, G ;
WOODALL, JM ;
KIRCHNER, PD ;
PETTIT, GD ;
WRIGHT, SL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :919-923
[8]   WSIO.11 SCHOTTKY GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
CALLEGARI, A ;
SPIERS, GD ;
MAGERLEIN, JH ;
GUTHRIE, HC .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2054-2058
[9]   UNIFORM AND THERMALLY STABLE AUGENI OHMIC CONTACTS TO GAAS [J].
CALLEGARI, A ;
PAN, ETS ;
MURAKAMI, M .
APPLIED PHYSICS LETTERS, 1985, 46 (12) :1141-1143
[10]  
CARONPOPOWICH R, IN PRESS J APPL PHYS
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