UNIFORM AND THERMALLY STABLE AUGENI OHMIC CONTACTS TO GAAS

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] OHMIC CONTACTS TO GAAS [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 391 - 397

[3] ALLOYED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807

[4] HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[5] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 835 - &

[6] HOT-PLATE ALLOYING FOR OHMIC CONTACTS TO GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1100 - 1103

[7] ILLIADIS A, 1984, SOLID STATE COMMUN, V49, P99

[8] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6952 - 6957

[9] MURAKAMI M, UNPUB

[10] ELEVATED-TEMPERATURE LOW-ENERGY ION CLEANING OF GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 787 - 790

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] OHMIC CONTACTS TO GAAS [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 391 - 397

[3] ALLOYED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807

[4] HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[5] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 835 - &

[6] HOT-PLATE ALLOYING FOR OHMIC CONTACTS TO GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1100 - 1103

[7] ILLIADIS A, 1984, SOLID STATE COMMUN, V49, P99

[8] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6952 - 6957

[9] MURAKAMI M, UNPUB

[10] ELEVATED-TEMPERATURE LOW-ENERGY ION CLEANING OF GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 787 - 790