A racetrack mode-locked silicon evanescent laser

被引：43

作者：

Fang, Alexander W. ^{[1
,2
,3
]}

Koch, Brian R. ^{[1
,2
,3
]}

Gan, Kian-Giap ^{[1
,2
,3
]}

Park, Hyundai ^{[1
,2
,3
]}

Jones, Richard ^{[1
,2
,3
]}

Cohen, Oded ^{[1
,2
,3
]}

Paniccia, Mario J. ^{[1
,2
,3
]}

Blumenthal, Daniel J. ^{[1
,2
,3
]}

Bowers, John. E. ^{[1
,2
,3
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

[3] Intel Corp, IL-91031 Jerusalem, Israel

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 02期

关键词：

Laser mode locking;

D O I：

10.1364/OE.16.001393

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

By utilizing a racetrack resonator topography, an on-chip mode locked silicon evanescent laser (ML-SEL) is realized that is independent of facet polishing. This enables integration with other devices on silicon and precise control of the ML-SEL's repetition rate through lithographic definition of the cavity length. Both passive and hybrid mode-locking have been achieved with transform limited, 7 ps pulses emitted at a repetition rate of 30 GHz. Jitter and locking range are measured under hybrid mode locking with a minimum absolute jitter and maximum locking range of 364 fs, and 50 MHz, respectively. (C) 2008 Optical Society of America.

引用

页码：1393 / 1398

页数：6

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