Sub-10 nm high-aspect-ratio patterning of ZnO using an electron beam

被引：57

作者：

Saifullah, MSM

Subramanian, KRV

Kang, DJ

Anderson, D

Huck, WTS

Jones, GAC

Welland, ME

机构：

[1] Univ Cambridge, Nanosci Ctr, Cambridge CB3 0FF, England

[2] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol, Suwon 440746, South Korea

[4] Univ Cambridge, Dept Phys, Semicond Phys Lab, Cambridge CB3 0HE, England

[5] Univ Cambridge, Dept Chem, Melville Lab, Cambridge CB2 1EW, England

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 14期

关键词：

D O I：

10.1002/adma.200500484

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An electron-beam-sensitive zinc naphthenate resist is used to pattern ZnO. Features as small as 7 nm and with an aspect ratio of similar to 9 can be patterned. Size reduction to similar to 5 nm is observed when these patterns are heat treated to give crystalline ZnO (see Figure). The functionality of ZnO is confirmed via photoluminescence studies.

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页码：1757 / +

页数：6

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