Blue luminescent center in ZnO films deposited on silicon substrates

被引：212

作者：

Fang, ZB ^{[1
]}

Wang, YY ^{[1
]}

Xu, DY ^{[1
]}

Tan, YS ^{[1
]}

Liu, XQ ^{[1
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Dept Phys, Lanzhou 730000, Peoples R China

来源：

OPTICAL MATERIALS | 2004年 / 26卷 / 03期

基金：

中国国家自然科学基金;

关键词：

ZnO films; photoluminescence; annealing; RF sputtering;

D O I：

10.1016/j.optmat.2003.11.027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline ZnO films have been deposited on Si substrates by RF actively sputtering technique. The photoluminescence (PL) spectra of the ZnO films show the blue emission peaks centered at 430 nm. The variation of these peak intensities and that of the free-carrier concentration were investigated at different annealing temperatures. The defect levels in ZnO films were also calculated using the method of full-potential linear muffin-tin orbital. We suggest that the blue emission corresponds to the electron transition from the level of interstitial Zn to the valence band. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：239 / 242

页数：4

共 18 条

[1] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[2] LUMINESCENCE OF HETEROEPITAXIAL ZINC-OXIDE [J].

BETHKE, S ;

PAN, H ;

WESSELS, BW .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :138-140

[3] Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn [J].

Cho, SL ;

Ma, J ;

Kim, YK ;

Sun, Y ;

Wong, GKL ;

Ketterson, JB .

APPLIED PHYSICS LETTERS, 1999, 75 (18) :2761-2763

[4] The effect of Zn buffer layer on growth and luminescence of ZnO films deposited on Si substrates [J].

Fu, ZX ;

Lin, BX ;

Liao, GH ;

Wu, ZQ .

JOURNAL OF CRYSTAL GROWTH, 1998, 193 (03) :316-321

[5] Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode [J].

Guo, XL ;

Choi, JH ;

Tabata, H ;

Kawai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (3A) :L177-L180

[6] Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film [J].

Gupta, V ;

Mansingh, A .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1063-1073

[7] Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties [J].

Li, Y ;

Meng, GW ;

Zhang, LD ;

Phillipp, F .

APPLIED PHYSICS LETTERS, 2000, 76 (15) :2011-2013

[8] Relaxation of carriers in terbium-doped ZnO nanoparticles [J].

Liu, SM ;

Liu, FQ ;

Wang, ZG .

CHEMICAL PHYSICS LETTERS, 2001, 343 (5-6) :489-492

[9] Residual native shallow donor in ZnO [J].

Look, DC ;

Hemsky, JW ;

Sizelove, JR .

PHYSICAL REVIEW LETTERS, 1999, 82 (12) :2552-2555

[10] Influence of the post-treatment on the properties of ZnO thin films [J].

Nunes, P ;

Fortunato, E ;

Martins, R .

THIN SOLID FILMS, 2001, 383 (1-2) :277-280

← 1 2 →