Gate-Activated Photoresponse in a Graphene p-n Junction

被引：378

作者：

Lemme, Max C. ^{[1
]}

Koppens, Frank H. L. ^{[1
,4
]}

Falk, Abram L. ^{[1
]}

Rudner, Mark S. ^{[1
]}

Park, Hongkun ^{[1
,2
]}

Levitov, Leonid S. ^{[3
]}

Marcus, Charles M. ^{[1
]}

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[2] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

[3] MIT, Dept Phys, Cambridge, MA 02139 USA

[4] ICFO Inst Ciencies Foton, Castelldefels 08860, Barcelona, Spain

来源：

NANO LETTERS | 2011年 / 11卷 / 10期

关键词：

graphene; p-n junction; photo-detection; thermoelectricity;

D O I：

10.1021/nl2019068

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.

引用

页码：4134 / 4137

页数：4

共 19 条

[1]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/nphoton.2010.186, 10.1038/NPHOTON.2010.186]

[2] Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible [J].