Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb -: art. no. 202108

被引：100

作者：

Ripalda, JM

Granados, D

González, Y

Sánchez, AM

Molina, SI

García, JM

机构：

[1] CSIC, CNM, Inst Microelect Madrid, PTM, Madrid 28760, Spain

[2] Univ Cadiz, Fac Ciencias, Dept Ciencia Mat & IM & QI, Cadiz 11510, Spain

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 20期

关键词：

D O I：

10.1063/1.2130529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature photoluminescence at 1.6 mu m is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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