Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates

被引：67

作者：

Akahane, K ^{[1
]}

Yamamoto, N ^{[1
]}

Ohtani, N ^{[1
]}

机构：

[1] CRL, Tokyo 1848795, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期

关键词：

quantum dot; strain-reducing layer; GaAsSb;

D O I：

10.1016/j.physe.2003.11.016

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We fabricated InAs quantum dots (QDs) with a GaAsSb strain-reducing layer (SRL) on a GaAs(001) substrate. The wavelength of emission from InAs QD is shown to be controllable by changing the composition and thickness of the SRL. An increase in photoluminescence intensity with increasing compositions of Sb and thickness of the GaAsSb SRL is also seen. The efficiency of radiative recombination was improved under both conditions because the InAs/GaAsSb/GaAs hetero-interface band structure more effectively suppressed carrier escape from the InAs QDs. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：295 / 299

页数：5

共 7 条

[1] Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers [J].