Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

被引：258

作者：

Tatebayashi, J ^{[1
]}

Nishioka, M ^{[1
]}

Arakawa, Y ^{[1
]}

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期

关键词：

D O I：

10.1063/1.1375842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated the 1.52 mum light emission at room temperature from self-assembled InAs quantum dots embedded in the In0.45Ga0.55As strain-reducing layer. By capping InAs quantum dots with an InGaAs strain-reducing layer instead of GaAs, the photoluminescence peak of InAs quantum dots can be controlled by changing the indium composition of the InGaAs strain-reducing layer. The full width at half maximum is as narrow as 22 meV. The wavelength of 1.52 mum is the longest wavelength so far achieved in self-assembled InAs quantum dots, which would be promising to quantum-dot lasers on GaAs substrate for application to light sources in long-wavelength optical communication systems. (C) 2001 American Institute of Physics.

引用

页码：3469 / 3471

页数：3

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