High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

被引：58

作者：

Mukai, K ^{[1
]}

Nakata, Y ^{[1
]}

Otsubo, K ^{[1
]}

Sugawara, M ^{[1
]}

Yokoyama, N ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 23期

关键词：

D O I：

10.1063/1.126644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports on the high characteristic temperature of InGaAs/GaAs quantum-dot lasers at room temperature. Self-assembled quantum dots were grown using low-growth-rate molecular-beam epitaxy, and continuous-wave lasing occurred at the dot ground level of 1.26 mu m at 25 degrees C. The characteristic temperature of the threshold currents was 120 K, and ground-level lasing was observed up to 100 degrees C. Comparing the lasing performances and the spontaneous emission spectra with those of 1.3 mu m emission dots, we found that the large volume density, deep potential, and high quantum efficiency were key points for improving the temperature characteristics. (C) 2000 American Institute of Physics. [S0003-6951(00)03523-3].

引用

页码：3349 / 3351

页数：3

共 19 条

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