Suppression of temperature sensitivity of interband emission energy in 1.3-μm-region by an InGaAs overgrowth on self-assembled InGaAs GaAs quantum dots

被引：70

作者：

Mukai, K ^{[1
]}

Sugawara, M ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 26期

关键词：

D O I：

10.1063/1.124237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We found that the temperature sensitivity of interband emission energy was suppressed significantly in 1.3-mu m-emitting self-assembled InGaAs/GaAs quantum dots by an InGaAs overgrowth on the dots. Transmission electron microscopy measurements indicated that lattice distortion was enhanced on dots in a 10-nm-thick InxGa1-xAs overgrowth layer. Photoluminescence spectra showed that the emission energy shift with increasing temperature was nearly negligible above 150 K when x greater than or equal to 0.25. The shift between 4.2 and 200 K was less than half that of bulk GaAs when x=0.3. The results reveal the potential of InGaAs-covered dots in realizing temperature-insensitive lasing wavelength of laser diodes by manipulating the three-dimensional strain distribution. (C) 1999 American Institute of Physics. [S0003-6951(99)02026-4].

引用

页码：3963 / 3965

页数：3

共 16 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] New III-V compound semiconductors TlInGaP for 0.9 mu m to over 10 mu m wavelength range laser diodes and their first successful growth [J].

Asahi, H ;

Yamamoto, K ;

Iwata, K ;

Gonda, S ;

Oe, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (7B) :L876-L879

[3]

KAMATH K, 1997, P IEEE LAS EL SOC 19, P498

[4] Vertical quantum confinement effect on optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices [J].

Kim, SJ ;

Asahi, H ;

Asami, K ;

Takemoto, M ;

Fudeta, M ;

Gonda, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B) :1540-1547

[5] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].

KIRSTAEDTER, N ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

RUVIMOV, SS ;

MAXIMOV, MV ;

KOPEV, PS ;

ALFEROV, ZI ;

RICHTER, U ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J .

ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417

[6] Photoconductance measurement on TlInGaP grown by gas source MBE [J].

Koh, H ;

Asahi, H ;

Fushida, M ;

Yamamoto, K ;

Takenaka, K ;

Asami, K ;

Gonda, S ;

Oe, K .

JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) :107-112

[7] Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots [J].

Mukai, K ;

Nakata, Y ;

Shoji, H ;

Sugawara, M ;

Ohtsubo, K ;

Yokoyama, N ;

Ishikawa, H .

ELECTRONICS LETTERS, 1998, 34 (16) :1588-1590

[8]

MUKAI K, 1999, SEMICONDUCT SEMIMET, V60, pCH3

[9]

NAGAI H, 1988, 3 5 MIXED CRYSTALS, P52

[10]

NOVIKOV SI, 1966, SEMICONDUCT SEMIMET, V2, pCH2

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