Reliability investigation of InGaP/GaAs heterojunction bipolar transistors

被引:28
作者
Bahl, SR [1 ]
Camnitz, LH [1 ]
Houng, D [1 ]
Mierzwinski, M [1 ]
机构
[1] HEWLETT PACKARD CORP,EESOF DIV,SANTA ROSA,CA 95403
关键词
D O I
10.1109/55.536288
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
During elevated-temperature bias stress, InGaP/GaAs HBT's grown by MOCVD show a medium term degradation in current gain of about 20%, with an activation energy of 0.64 eV. They also show a corresponding decrease in base resistance and an increase in turn-on voltage. InGaP/GaAs HBT's grown by GSMBE, however, do not show this degradation. SIMS measurements show a five times greater than GSMBE-epi hydrogen concentration of about 10(19) cm(-3) in the base layer of the MOCVD-grown epi. The degradation can be explained by acceptor depassivation due to hydrogen out-diffusion from the epi during stress.
引用
收藏
页码:446 / 448
页数:3
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