共 10 条
[1]
DAVITO DB, 1993, US C GAAS MANUFACTUR, P25
[2]
FREI MR, 1994, DEVICE RES C
[5]
Nakajima O., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P673, DOI 10.1109/IEDM.1990.237110
[6]
COMPARISON OF H+ AND HE+ IMPLANT ISOLATION OF GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1995, 13 (01)
:15-18
[7]
PIERRET RF, 1983, MODULAR SERIES SOLID, V1, P40
[9]
TAKAHASHI T, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P191, DOI 10.1109/IEDM.1994.383433
[10]
WU DW, 1993, GAAS IC SYMPOSIUM - TECHNICAL DIGEST 1993, P259, DOI 10.1109/GAAS.1993.394456