LOW-FREQUENCY NOISE IN SELF-ALIGNED GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：16

作者：

PLANA, R

GRAFFEUIL, J

DELAGE, SL

BLANCK, H

DIFORTEPOISSON, MA

BRYLINSKI, C

CHARTIER, E

机构：

[1] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

[2] UNIV PASABATIER,F-31077 TOULOUSE,FRANCE

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 25期

关键词：

BIPOLAR DEVICES; NOISE; TRANSISTORS;

D O I：

10.1049/el:19921517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first characterisation of the low frequency noise performances of nonpassivated selfaligned GaInP/GaAs heterojunction bipolar transistors (HBT) is reported. The observed low frequency noise is smaller than for more classical GaAlAs/GaAs HBTs and is attributed to a reduced trap concentration at the GaInP/GaAs heterointerface.

引用

页码：2354 / 2356

页数：3

共 7 条

[1] 1ST MICROWAVE CHARACTERIZATION OF LP-MOCVD GROWN GALNP/GAAS SELF-ALIGNED HBT [J].