A LOW-NOISE MICROWAVE-OSCILLATOR EMPLOYING A SELF-ALIGNED ALGAAS/GAAS HBT

被引：4

作者：

MADIHIAN, M

HAYAMA, N

LESAGE, SR

HONJO, K

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

[2] RAYTHEON CO,DIV MISSILL SYST,BEDFORD,MA 01730

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1989年 / 37卷 / 11期

关键词：

D O I：

10.1109/22.41049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1811 / 1814

页数：4

共 17 条

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IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :10-12

[2]

CU C, 1983, IEEE IEDM DIG, P601

[3] A THEORY OF NOISE IN GAAS-FET MICROWAVE-OSCILLATORS AND ITS EXPERIMENTAL-VERIFICATION [J].

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JOSHI, JS .

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[4]

DERZIEL A, 1979, ADV ELECTRON ELECTRO, V49, P225

[5]

DERZIEL A, 1978, ADV ELECTRON ELECTRO, V46, P313

[6] SUBMICROMETER FULLY SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

HAYAMA, N ;

OKAMOTO, A ;

MADIHIAN, M ;

HONJO, K .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :246-248

[7] GAAS-FETS WITH A FLICKER-NOISE CORNER BELOW 1 MHZ [J].

HUGHES, B ;

FERNANDEZ, NG ;

GLADSTONE, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) :733-741

[8]

KIM ME, 1988, 1988 IEEE GAAS IC S

[9]

KUROKAWA K, 1969, AT&T TECH J, P1937

[10] 15.6 GHZ HBT MICROSTRIP OSCILLATOR [J].

LESAGE, SR ;

MADIHIAN, M ;

HAYAMA, N ;

HONJO, K .

ELECTRONICS LETTERS, 1988, 24 (04) :230-232

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