A THEORY OF NOISE IN GAAS-FET MICROWAVE-OSCILLATORS AND ITS EXPERIMENTAL-VERIFICATION

被引：22

作者：

DEBNEY, BT

JOSHI, JS

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 07期

关键词：

D O I：

10.1109/T-ED.1983.21208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：769 / 776

页数：8

共 22 条

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[7] MONOLITHIC MICROWAVE GALLIUM-ARSENIDE FET OSCILLATORS [J].

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[8] HIGH PERIPHERAL POWER-DENSITY GAAS-FET OSCILLATOR [J].

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[9]

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[10] DESIGN AND PERFORMANCE OF X-BAND OSCILLATORS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

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