MONOLITHIC MICROWAVE GALLIUM-ARSENIDE FET OSCILLATORS

被引：19

作者：

JOSHI, JS

COCKRILL, JR

TURNER, JA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 02期

关键词：

D O I：

10.1109/T-ED.1981.20303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：158 / 162

页数：5

共 12 条

[1]

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[2]

EDSON W, 1953, VACUUM TUBE OSCILLAT, P430

[3]

Grover F.W., 1946, INDUCTANCE CALCULATI

[4] LARGE-SIGNAL GAAS MESFET OSCILLATOR DESIGN [J].

JOHNSON, KM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (03) :217-227

[5] HIGH PERIPHERAL POWER-DENSITY GAAS-FET OSCILLATOR [J].

JOSHI, JS ;

TURNER, JA .

ELECTRONICS LETTERS, 1979, 15 (05) :163-164

[6]

JOSHI JS, 1979, SEP DIG GAAS IC S LA

[7]

LIM YC, 1968, IEEE T ELECTRON DEV, VED15, P173

[8] DESIGN AND PERFORMANCE OF X-BAND OSCILLATORS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

MAEDA, M ;

KIMURA, K ;

KODERA, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, 23 (08) :661-667

[9] COMMON-GATE GAAS FET OSCILLATOR [J].

OMORI, M ;

NISHIMOTO, C .

ELECTRONICS LETTERS, 1975, 11 (16) :369-371

[10]

PENGELLY RS, UNPUBLISHED

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