HIGH PERIPHERAL POWER-DENSITY GAAS-FET OSCILLATOR

被引：5

作者：

JOSHI, JS

TURNER, JA

机构：

[1] Allen Clark Research Centre, Plessey Research (Caswell) Ltd., Caswell, Towcester, Northants.

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 05期

关键词：

Field-effect transistor circuits; Microwave oscillators;

D O I：

10.1049/el:19790116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Peripheral power density (p.p.d.), i.e. the output power per unit gate width is defined as a figure of merit for GaAs f.e.t. oscillators. An X-band oscillator circuit using series and shunt feedback is described and its performance characteristics indicated. It is shown that this GaAs f.e.t. oscillator circuit configuration has the highest peripheral power density.© 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：163 / 164

页数：2

共 7 条

[1] HIGHLY STABILIZED LOW-NOISE GAAS FET INTEGRATED-OSCILLATOR WITH A DIELECTRIC RESONATOR IN C-BAND [J].