Observation of surface modification and secondary particle emission in HCI-surface interaction

被引：4

作者：

Takahashi, S ^{[1
]}

Tona, M

Nagata, K

Yoshiyasu, N

Nakamura, N

Sakurai, M

Yamada, C

Ohtani, S

机构：

[1] Univ Electrocommun, Inst Laser Sci, Chofu, Tokyo 1828585, Japan

[2] Japan Sci & Technol Agcy, Chofu, Tokyo 1828585, Japan

[3] Univ Electrocommun, Dept Appl Phys & Chem, Chofu, Tokyo 1828585, Japan

[4] Kobe Univ, Dept Phys, Kobe, Hyogo 6578501, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 235卷

关键词：

highly charged ions; single ion implantation; H-terminated Si surface; secondary electron; secondary ion;

D O I：

10.1016/j.nimb.2005.03.224

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have observed secondary particle emission in collision of HCI with Si and HOPG surfaces. For HOPG, we have measured the number of secondary electrons and the number of dot structures on the surface as the imprint of the incidence by STM. The single ion impact is surely observable with almost 100% efficiency by detecting an event of the secondary electron emission. For hydrogen terminated Si(1 1 1), H+, H-2(+), H-3(+), C+ and Si+ ions have been detected. The proton sputtering yield, which depends on the charge of HCI, has been examined. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：456 / 459

页数：4

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