Miscibility gap calculation for Ga1-xInxNyAs1-y including strain effects

被引：34

作者：

Schlenker, D ^{[1
]}

Miyamoto, T ^{[1
]}

Pan, Z ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 196卷 / 01期

关键词：

miscibility gap; spinodal decomposition; GaInNAs; strain effects; quantum well laser;

D O I：

10.1016/S0022-0248(98)00787-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A method including strain effects is introduced for calculating the miscibility gap of the GaxIn1-xNyAs1-y material system. The Gibbs free energy is computed using the delta lattice parameter model and the conventional solution model. The contribution caused by the strain energy due to the mismatch between substrate and epitaxial layer is added. The spinodal points can be calculated from this expression. The critical temperature above which the solid is metastable has been found to be increased due to strain effects. It is pointed out that the result of the calculation depends on the choice of substrate. The miscibility gaps for GaxIn1-xAs, GaNyAs1-y and GaxIn1-xNyAs1-y are evaluated by this method for a more realistic model of crystal growth. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：67 / 70

页数：4

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